ADESH is an acronym for Atomistic DEfect Simulation Handler. ADESH calculates atomistic configurations and energies of point, line, and surface defects in solid metallic, covalent, and ionic materials. Static, Monte-Carlo, Simulated Annealing, Swap, and Random Walk techniques are all available for energy minimization of defined configurations. Investigate nucleation effects by linking the calculations to processing parameters such as temperature, pressure, and time. Includes all 14 Bravais lattices so that there are no limits on the crystal system.
ADESH can be used to simulate:
- elements, alloys and compounds
- thin films and bulk materials
- point defects (vacancies, interstitials, substitutionals
- line defects ( dislocations)
- surface defects (grain boundaries, stacking faults)
- volumetric defects (voids, precipitates)
Current applications of ADESH include
- study of diffusion of point defects near structural defects
- simulation of growth directions of dislocations in ion-implanted and laser annealed samples
- segregation of point defects near dislocations and grain boundaries
- formation of misfit dislocations in thin films
- void formation in metal interconnects on integrated circuits
| Item | List Price | Academic Price |
|---|---|---|
| ADESH 3.0 | $499 | $499 |